Description
The Atmel AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB161E also supports RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pademory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
Features
Single 2.3V - 3.6V or 2.5V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports Atmel® RapidS™ operation
Continuous Read capability through entire array
Up to 85MHz
Low-power Read option up to 10MHz
Clock-to-output time (tV) of 6ns maximum
User configurable page size
512 bytes per page
528 bytes per page (default)
Page size can be factory pre-configured for 512 bytes
Two fully independent SRAM data buffers (512/528 bytes)
Allows receiving data while reprogramming the Main Memory Array
Flexible programming options
Byte/Page program (1 to 512/528 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible Erase options
Page Erase (512/528 bytes)
Block Erase (4KB)
Sector Erase (128KB)
Chip Erase (16-Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Software controlled reset
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
500nA Ultra-Deep Power-Down current (typical)
3μA Deep Power-Down current (typical)
25μA Standby current (typical)
11mA Active Read current (typical)
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.150" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
9-ball Chip-scale BGA (5 x 5 x 1.2mm)
